In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering

Autor:	Sohya Kudoh, Shun-ichiro Ohmi, Yuske Horiuchi, Shin Ishimatsu
Rok vydání:	2020
Předmět:	Plasma nitridation In situ Materials science Sputtering Analytical chemistry Gate insulator Plasma Electrical and Electronic Engineering Electron cyclotron resonance Electronic Optical and Magnetic Materials High-κ dielectric
Zdroj:	IEICE Transactions on Electronics. :299-303
ISSN:	1745-1353 0916-8524
DOI:	10.1587/transele.2019fup0001
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9b16bdd18088a61c66c6cf3e91e36cb4 https://doi.org/10.1587/transele.2019fup0001 Zobrazit plný text záznamu