Nanoscale Electrical Characterization of Organized GaAsP Nanowires for Photovoltaic Energy Harvesting
| Autor: | François H. Julien, Andrea Cattoni, C. Himwas, Maria Tchernycheva, Stéphane Collin, Fabrice Oehler, Omar Saket, Jean-Christophe Harmand |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Electron beam-induced current Schottky barrier Doping Nanowire 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Indium tin oxide Electrode Microscopy Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC). |
| Popis: | We report the characterization of GaAsP nanowires in view of their photovoltaic applications. The nanowires containing a p-i-n junction were elaborated by molecular beam epitaxy using Be and Si as p- and n- doping impurities. Electron beam induced current microscopy was used to analyze the electrical activity of single nanowires and of nanowire arrays. Nanowire array devices were fabricated by encapsulating the nanowires in a transparent polymer and contacting them with indium tin oxide electrode. Electron beam induced current microscopy in top view configuration is used to probe the electrical activity and homogeneity of the device. A Schottky barrier at the nanowire/ITO interface induced wireto-wire inhomogeneity. |
| Databáze: | OpenAIRE |
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