Reliability of HfSiON as gate dielectric for advanced CMOS technology

Autor:	Carlos H. Diaz, Howard Wang, Min-Hwa Chi, Chien-Tai Chan, A.S. Oates, Huan-Just Lin, Shih-Chang Chen, Ching-Wei Tsai, Ying Jin, Hun-Jan Tao, Mong-Song Liang, Shang-Jr Chen, Tongchern Ong
Rok vydání:	2005
Předmět:	Electron mobility Materials science CMOS business.industry MOSFET Gate dielectric Electrical engineering Optoelectronics Flicker noise SILC business NMOS logic PMOS logic
Zdroj:	Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
Popis:	Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The improvement is attributed to excellent thermal stability against partial-crystallization after 1100/spl deg/C annealing, and the concomitantly reduced trap generation minimizes stress induced leakage current (SILC) and flicker noise degradation after PBTI stress. A new methodology is proposed, for the first time, to correctly predict HC lifetime of HfSiON nMOS based on electron trapping.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9af0b019dfdfb277a9020e0a1e7debf7 https://doi.org/10.1109/.2005.1469255 Zobrazit plný text záznamu