Electronic structure of As2Te3–GeTe crystalline compounds

Autor:	C. Senemaud, E. Brousse, A. Gheorghiu de la Rocque, Pierre-Emmanuel Lippens, Josette Olivier-Fourcade
Rok vydání:	2001
Předmět:	Crystallography Valence (chemistry) Tight binding X-ray photoelectron spectroscopy Chemistry Photoemission spectroscopy Binding energy General Materials Science Atomic charge General Chemistry Electronic structure Condensed Matter Physics
Zdroj:	Journal of Physics and Chemistry of Solids. 62:467-474
ISSN:	0022-3697
Popis:	The electronic structures of As 2 Te 3 , GeTe and the layered compounds As 2 Ge n Te 3+ n with n =1–5 have been experimentally studied by means of X-ray photoemission spectroscopy (XPS). The XPS valence bands show changes as a function of n , which are explained by tight-binding calculations of the total and partial densities of states. The values of the binding energy of the Ge 3d 5/2 , As 3p 3/2 , and Te 3d 5/2 core-levels were measured and are related to the calculated atomic charges.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9aa422e9603a22a4737b0ec18f59d910 https://doi.org/10.1016/s0022-3697(00)00188-8 Zobrazit plný text záznamu Full Text from ScienceDirect