Issues of contact etching and pre-treatment in Schottky contact
| Autor: | Hak-sun Lee, Woo-Sung Han, Chang-Jin Kang, Nammyun Cho, Kyoung-sub Shin, Joo-Tae Moon, Gyung-jin Min |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon Schottky barrier Metallurgy Contact resistance Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Etching (microfabrication) Silicide Materials Chemistry Fluorine Boron Fluoride |
| Zdroj: | Thin Solid Films. 517:3844-3846 |
| ISSN: | 0040-6090 |
| Popis: | This paper reports on the process dependence of contact resistance of silicide/n+ Si and silicide/p+ Si contact. Three processes such as contact etching, Si treatment and pre-treatment are investigated with contact resistance point of view. Only silicide/p+ Si contact resistance has been changed as etching time of contact increases while silicide/n+ Si contact resistance has been regularly maintained. We have modeled that fluorine used in contact etching can scavenge or deactivate boron in p+ Si, resulting in degradation of silicide/p+ Si contact resistance. In order to confirm the model, two different gases (hydro carbon fluoride/carbon fluoride) during Si treatment right after contact etching were applied. As a result, the silicide/p+ Si contact resistance was increased in carbon fluoride case, which has higher fluorine ratio to carbon than hydro carbon fluoride case. It is also observed that the silicide/p+ Si contact resistance was increased proportionally with time of fluorine-based pre-treatment before silicide formation. |
| Databáze: | OpenAIRE |
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