Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications

Autor:	Sungju Choi, Ga Won Yang, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun-Seok Choi, Namhyun Lee, Gang-Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong-Ho Bae, Dae Hwan Kim
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 70:48-52
ISSN:	1557-9646 0018-9383
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::99adbcb9dcd06e124103f327f16f902f https://doi.org/10.1109/ted.2022.3221028 Zobrazit plný text záznamu