The Effects of Chemical Vapor Cleaning Chemistries on Silicon Surfaces

Autor:	David Arthur Bohling, Andrew G. Gilicinski, John Giles Langan, Scott Edward Beck, J.C. Tvankovits, R.M. Rynders, B.S. Felker, M.A. George
Rok vydání:	1993
Předmět:	chemistry.chemical_compound Materials science Silicon nitride chemistry Silicon Trace Amounts Chemical engineering Fluorine chemistry.chemical_element Plasma treatment
Zdroj:	MRS Proceedings. 318
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-318-263
Popis:	This study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (HFAC). A thin silicon nitride film forms on the silicon surface as a result of exposure to the HMDS process and is attributed to the H2/N2 plasma treatment used in the first step of the process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::994cba17e97cf300affd880333ed3378 https://doi.org/10.1557/proc-318-263 Zobrazit plný text záznamu Full text from SpringerLink