Temperature Dependence of Three-Terminal Molecular Junctions with Sulfur End-Functionalized Tercyclohexylidenes
| Autor: | Cornelis A. van Walree, Edgar A. Osorio, Herre S. J. van der Zant, Daniel Vanmaekelbergh, Menno Poot, Kevin O'Neill, Leonardus W. Jenneskens, Jos Thijssen |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Toy model
Chemistry Mechanical Engineering Molecular electronics chemistry.chemical_element Bioengineering Nanotechnology Biasing General Chemistry Atmospheric temperature range Condensed Matter Physics Sulfur Molecular physics symbols.namesake symbols Fermi–Dirac statistics Molecule General Materials Science Voltage |
| Zdroj: | Nano Letters. 6:1031-1035 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl0604513 |
| Popis: | We have studied the gate and temperature dependence of molecular junctions containing sulfur end-functionalized tercyclohexylidenes. At low temperatures we find temperature-independent transport; at temperatures above 150 K the current increases exponentially with increasing temperature. Over the entire temperature range (10 -300 K), and for different gate voltages, a simple toy model of transport through a single level describes the experimental results. In the model, the temperature dependence arises from the Fermi distribution in the leads and in a three-parameter fit we extract the level position and the tunnel rates at the left and right contact. We find that these parameters increase as the bias voltage increases. |
| Databáze: | OpenAIRE |
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