Effects of radiation on long wavelength devices and fibers

Autor:	Krishna Rao Linga, Alvin S. Kanofsky
Rok vydání:	1994
Předmět:	Physics Proton business.industry Optical engineering Electron Radiation law.invention chemistry.chemical_compound Optics chemistry law Van de Graaff generator Optoelectronics Resistor business Indium gallium arsenide Diode
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.168629
Popis:	We have measured the effects of radiation on various long wavelength diode devices using InGaAs technology. The various components were exposed to radiation of continuous electron and gamma beams at the Lehigh University Van de Graaff Radiation Facility and proton beams at the Brookhaven Tandem Facility.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::99137ceeacd0bab7f71bbc9bcd5bcd22 https://doi.org/10.1117/12.168629 Zobrazit plný text záznamu