Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires
| Autor: | Qipeng Lu, Yihan Zhu, Lin Gu, Xue-Jun Wu, Shikui Han, Zhicheng Zhang, Hua Zhang, Yu Han, Junze Chen, Zhenzhong Yang, Yifu Yu, Yun Zong, Yue Gong, Bing Li |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Chemistry
Nanowire Heterojunction Nanotechnology 02 engineering and technology General Chemistry Edge (geometry) 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Biochemistry Catalysis 0104 chemical sciences Longitudinal direction Chalcogen Colloid and Surface Chemistry Transition metal 0210 nano-technology |
| Zdroj: | Journal of the American Chemical Society. 139:8653-8660 |
| ISSN: | 1520-5126 0002-7863 |
| DOI: | 10.1021/jacs.7b03752 |
| Popis: | Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with an interface at the edges of TMD nanosheets (NSs) still remains a great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructure in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2–xS nanowires (NWs) in an epitaxial manner. The obtained Cu2–xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2–xS NWs through gradual injection of chalcogen precursors. After cation exchange of Cu in Cu2–xS-TMD heterostructures with Cd, the obtained CdS–MoS2 heterostructures retained their original architectures. Compared to the pure CdS NWs, the CdS–MoS2 heterostructures wi... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|