Electron Transport Modeling of GaN-based HEMT's by Poisson-Schrodinger Cellular-Automaton Coupled Approach

Autor: Koichi Fukuda, Junichi Hattori, Hidehiro Asai, Junya Yaita, Junji Kotani
Rok vydání: 2020
Zdroj: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2020.d-7-05
Databáze: OpenAIRE