Indium Diffusion Behavior and Application in HfO 2 ‐Based Conductive Bridge Random Access Memory

Autor:	Wei-Chen Huang, Lin-Yi Shih, Hui-Chun Huang, Wen-Chung Chen, Yi-Ting Tseng, Ting-Chang Chang, Tsung-Ming Tsai, Simon M. Sze, Chih-Cheng Shih, Chih-Cheng Yang, Pei-Yu Wu, Yao-Kai Shih, Hao-Xuan Zheng
Rok vydání:	2019
Předmět:	Random access memory Materials science business.industry Electrical engineering chemistry.chemical_element Condensed Matter Physics Bridge (interpersonal) Resistive random-access memory chemistry General Materials Science Diffusion (business) business Electrical conductor Indium
Zdroj:	physica status solidi (RRL) – Rapid Research Letters. 13:1900285
ISSN:	1862-6270 1862-6254
DOI:	10.1002/pssr.201900285
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::97fef15c06a80997fabc1c0774463e70 https://doi.org/10.1002/pssr.201900285 Zobrazit plný text záznamu Plný text