THz InP bipolar transistors-circuit integration and applications
Autor: | Bobby Brar, Adam Young, Robert Maurer, Z. Griffith, R.L. Pierson, Miguel Urteaga, Petra Rowell, Seong-Kyun Kim, Jonathan Hacker, Mark J. W. Rodwell |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science business.industry Terahertz radiation Heterojunction bipolar transistor 020208 electrical & electronic engineering RF power amplifier Bipolar junction transistor Transistor Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Integrated circuit 01 natural sciences law.invention chemistry.chemical_compound chemistry law 0103 physical sciences Extremely high frequency Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Indium phosphide Optoelectronics business |
Zdroj: | 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). |
Popis: | Highly-scaled Indium Phosphide (InP) transistor technologies have bandwidths extending into the terahertz (THz) frequency regime (0.3–3 THz). The high transistor bandwidth can be exploited to both extend circuit operation to THz frequencies and improve system performance at millimeter wave and sub-millimeter wave frequencies. InP heterojunction bipolar transistor (HBT) technologies offer wide bandwidths, high RF power handling and the capability to realize high levels of integration. We review integrated circuit (IC) results from Teledyne's InP HBT technologies that span frequencies from 60 GHz to >600 GHz focusing on performance benefits and applications. |
Databáze: | OpenAIRE |
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