Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure
| Autor: | L. N. Vostretsova, N. S. Grushko, A. S. Ambrosevich, A. S. Kagarmanov |
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| Rok vydání: | 2009 |
| Předmět: |
Physics
business.industry Alloy Atmospheric temperature range engineering.material Condensed Matter Physics Luminance Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law Radiative transfer engineering Optoelectronics business Recombination Quantum well Diode Light-emitting diode |
| Zdroj: | Semiconductors. 43:1356-1362 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782609100182 |
| Popis: | Electroluminescence spectra of a light-emitting diode’s structure based on InGaN alloy with an In content of 11% were studied at a fixed current in the temperature range of 93–323 K. It was found that the electroluminescence spectra contain two peaks: one at an energy of 2.91 eV, caused by recombination in the InGaN’s quantum well and the other at 3.41 eV at 153 K, caused by band-to-band radiative transitions in GaN. Luminance—current characteristics at 93 and 293 K were analyzed. |
| Databáze: | OpenAIRE |
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