A COMPLEX MODEL FOR THE HYDROGENATED VACANCY IN CRYSTALLINE SILICON

Autor:	Deng Cong-Hao, Dai Guo-Cai, Guan Da-Ren
Rok vydání:	1986
Předmět:	CNDO/2 Crystallography Silicon chemistry Hydride Vacancy defect General Physics and Astronomy chemistry.chemical_element Crystalline silicon Symmetry (physics)
Zdroj:	Acta Physica Sinica. 35:709
ISSN:	1000-3290
Popis:	The electronic energies of hydrogenated silicon vacancy which has Td symmetry are calculated. Using the method of completely neglecting of differential overlap (CNDO), we find the probability of the formation of the hydride quartet, and the effect of interaction between four SiH units in the model. We conclude that the hydride quartet complex is a more plausible model for the hydrogenated vacancy in crystalline silicon than that with four SiH bonds unrelated one another.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::96acc952388beb0acfa8e1222b91871c https://doi.org/10.7498/aps.35.709 Zobrazit plný text záznamu