Radiative recombination in CuInSe2 thin films
| Autor: | H.W. Schock, K. Leo, S. Zott, M. Ruckh |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Photoluminescence
Materials science business.industry Band gap Exciton General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Condensed Matter::Materials Science Physical vapor deposition Optoelectronics Spontaneous emission Photoluminescence excitation Emission spectrum Thin film business |
| Zdroj: | Journal of Applied Physics. 82:356-367 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.366546 |
| Popis: | We perform a detailed analysis of the radiative recombination processes in CuInSe2 thin films grown by multisource physical vapor deposition. The photoluminescence and photoluminescence excitation spectra are investigated as a function of stoichiometry, temperature and excitation intensity. Using samples with a large composition gradient, we are able to obtain a coherent picture of the optical transitions in the films. The broad–band photoluminescence spectrum typical for In–rich films breaks into a number of well–defined emission lines in Cu–rich CuInSe2. At low temperatures, emission peaks due to free–exciton, bound–exciton, and free–to–bound recombination are identified in Cu–rich films. The spectra of In–rich films tend to be dominated by donor–acceptor transitions. From the optical spectra, exciton ionization energies and the temperature dependence of the band gap are determined. The observed optical transitions are related to intrinsic defects.We perform a detailed analysis of the radiative recombination processes in CuInSe2 thin films grown by multisource physical vapor deposition. The photoluminescence and photoluminescence excitation spectra are investigated as a function of stoichiometry, temperature and excitation intensity. Using samples with a large composition gradient, we are able to obtain a coherent picture of the optical transitions in the films. The broad–band photoluminescence spectrum typical for In–rich films breaks into a number of well–defined emission lines in Cu–rich CuInSe2. At low temperatures, emission peaks due to free–exciton, bound–exciton, and free–to–bound recombination are identified in Cu–rich films. The spectra of In–rich films tend to be dominated by donor–acceptor transitions. From the optical spectra, exciton ionization energies and the temperature dependence of the band gap are determined. The observed optical transitions are related to intrinsic defects. |
| Databáze: | OpenAIRE |
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