Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers
| Autor: | Vladimir Rumyantsev, Mikhail A. Fadeev, V. I. Gavrilenko, D. V. Kozlov, Heinz-Wilhelm Hübers, S. V. Morozov, A. M. Kadykov |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Molecular physics Acceptor Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Impurity 0103 physical sciences Valence band Ionization energy 0210 nano-technology |
| Zdroj: | Semiconductors. 52:1369-1374 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | A method for calculating the states of multivalent donors and acceptors in Hg1 –xCdxTe materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg1 –xCdxTe films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg1 –xCdxTe films. |
| Databáze: | OpenAIRE |
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