Design of 65 nm CMOS SRAM for Space Applications: A Comparative Study

Autor:	Vladimir V. Emeliyanov, Anna B. Boruzdina, Gennady I. Zebrev, Andrey G. Petrov, A.V. Ulanova, Pavel S. Dolotov, Andrey A. Antonov, Maxim S. Gorbunov
Rok vydání:	2014
Předmět:	Nuclear and High Energy Physics Microcontroller Engineering Nuclear Energy and Engineering CMOS business.industry Sram cell Electronic engineering Dice Static random-access memory Electrical and Electronic Engineering business Heavy ion irradiation
Zdroj:	IEEE Transactions on Nuclear Science. 61:1575-1582
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2014.2319154
Popis:	 Abstract — We study t he design of different 6T and DICE SRAM blocks based on a commercial 65 nm CMOS technology and discuss the experimental results for X - ray, proton and heavy ion irradiation campaigns. The results obtained show tha t the number of affected bits depends not only on LET value, but also on the loca tion of a strike. MCU patterns are discussed. The sensitive area is estimated as the whole SRAM cell area after deduction of the region between N+ and P+ guard rings. The resu lts for normally incident particles clearly showed the advantages and trade - offs of different circuit and layout techniques.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9522d1049ed8647a5a4b846facc5e89d https://doi.org/10.1109/tns.2014.2319154 Zobrazit plný text záznamu