SiC for Microwave Power Transistors

Autor: Anant K. Agarwal, R. R. Siergiej, C. D. Brandt, S. Sriram, Rowland C. Clarke
Rok vydání: 1997
Předmět:
Zdroj: physica status solidi (a). 162:441-457
ISSN: 1521-396X
0031-8965
DOI: 10.1002/1521-396x(199707)162:1<441::aid-pssa441>3.0.co;2-3
Popis: The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f max for a 0.5 μm MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power.
Databáze: OpenAIRE
Externí odkaz: