Nonlocal Electron Dynamics in Donor‒Acceptor Doped Transistor Heterostructures
| Autor: | V. M. Lukashin, S. I. Novikov, A. S. Bogdanov, A. B. Pashkovskii |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Drift velocity Materials science Condensed matter physics Doping Transistor Heterojunction 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electron localization function Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law 0103 physical sciences Phenomenological model Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology Donor acceptor |
| Zdroj: | Russian Microelectronics. 49:195-209 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrodinger and Poisson equations and a system of hydrodynamic equations. It is shown that, when an electron enters the region of a strong field, the donor–acceptor doping increases the average drift velocity of electrons several times in the inverted heterostructures and by a factor of 1.5 in the transistor heterostructures based on the double-sided doped InxGa1– xAs–AlyGa1– yAs and InxGa1– xAs–InyAl1– yAs heterojunctions. In this case, the surface density of electrons in the double-sided doped structures can be more than doubled without a noticeable deterioration of the transport characteristics. |
| Databáze: | OpenAIRE |
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