Interfacial stress characterization for stress-induced voiding in Cu/low-k interconnects

Autor:	P.C. Yen, L.D. Chen, R.C.J. Wang, Kuei-Shu Chang-Liao, C.C. Chiu, K. Wu, S.R. Lin
Rok vydání:	2005
Předmět:	Stress (mechanics) Interconnection Materials science Stress variation chemistry Interfacial stress Electronic engineering chemistry.chemical_element Stress induced voiding Composite material Copper Finite element method Characterization (materials science)
Zdroj:	Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..
Popis:	Stress-induced voiding (SIV) was studied in the aspects of global and localized stress variation with the change of copper geometries. Two types of interconnect structures were adopted to evaluate resistance shift versus bake time and feature size effect in Cu/low-k systems. A 3D modeling of finite element analysis (FEA) was conducted to profile the stress contour, which directly attributed to the copper voiding underneath via as well as inside via.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93d59d90e600ca054b99eabcb1625fb9 https://doi.org/10.1109/ipfa.2005.1469138 Zobrazit plný text záznamu