(Invited) PE-TEOS Wafer Bonding Enhancement at Low Temperature with a High-k Dielectric Capping Layer

Autor:	Chuan Seng Tan, Gang Yih Chong
Rok vydání:	2010
Předmět:	Materials science Wafer bonding Dielectric Composite material Layer (electronics)
Zdroj:	ECS Transactions. 28:489-498
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3372603
Popis:	The bond strength of plasma-enhanced tetraethyl-orthosilicate (PE-TEOS) oxide bonded and annealed at low temperature (300 oC and below) is enhanced using a thin layer of high-K dielectric at the bonding interface. Prior to bonding, thin (~5 nm) capping layer of Al2O3 high-K dielectric is deposited using atomic layer deposition (ALD) on polished PE-TEOS wafers followed by surface activation. It is found that after 300 oC anneal in N2 ambient for 3 h, bond strength of wafer pair bonded with PE-TEOS oxide is enhanced by 73.3%. The bonding interface is seamless with no presences of micro-void.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::93a564c33b07b4dca04c73a5c95e35ed https://doi.org/10.1149/1.3372603 Zobrazit plný text záznamu