MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk

Autor:	Craig R. Nelson, T. Salagaj, Gary S. Tompa, P. L. Anderson, W. H. Wright, R.A. Stall, W. L. Ahlgren, L. Cook, S.M. Johnson
Rok vydání:	1991
Předmět:	Chemistry Instrumentation Semiconductor materials Analytical chemistry Mineralogy Heterojunction Crystal growth Condensed Matter Physics Epitaxy Inorganic Chemistry Materials Chemistry Wafer Metalorganic vapour phase epitaxy Thin film
Zdroj:	Journal of Crystal Growth. 107:198-202
ISSN:	0022-0248
Popis:	A variety of II–VI compounds, (Hg, Cd, Zn), (Se, Te), have been grown in a vertical MOVPE reactor which incorporates a horizontal wafer carrier which is rotated at high speeds. We report here on the growth system and the materials results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::933b4db6a43b2509e861573c6f8d89a3 https://doi.org/10.1016/0022-0248(91)90456-f Zobrazit plný text záznamu