Comparison of low energy BF2+, BCl2+, and BBr2+ implants for the fabrication of ultrashallow P+-N junctions
| Autor: | Taras A. Kirichenko, Raghu Srinivasa, Hong Jyh Li, Sanjay K. Banerjee, Swaroop Ganguly, Vikas Agarwal, Li Lin, P. Kohli |
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| Rok vydání: | 2002 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 91:2023-2027 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We present a comparative study of BCl2+ and BBr2+, and the traditionally used BF2+, as implant species for the formation of ultrashallow P+-N junctions. From “as-implanted” profiles, a large reduction in channeling tail has been observed for the BCl2+ and BBr2+ implants, relative to BF2+ implantation; the depths are reduced by over 200 A compared to the “equivalent” energy BF2+ implants. After annealing, the 5 keV BCl2+ implanted junctions are shallower than the 5 keV BF2+ junctions by over 150 A. The 18 keV BBr2+ implants yield junctions as shallow as 100 A, but suffer from severe doss loss problems—probably caused by enhanced surface scattering and etching for the deceleration mode implant. The 20 keV BBr2+ implants done without deceleration show no dose loss, and result in junction depths identical to those in the 5 keV BF2+ implants. Leakage current measurements indicate an increase of three orders of magnitude for the BCl2+ implanted junctions over BF2+ ones; BBr2+ implanted junctions exhibit lower l... |
| Databáze: | OpenAIRE |
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