The applicability of implanted -sources to thickness and stoichiometry measurements of thin films

Autor:	E Redmard, I. Kelson, M. Beaudoin, Y Levy, T. Pinnington, U. Giesen, D Racah, Thomas Tiedje
Rok vydání:	1997
Předmět:	Energy loss Materials science Acoustics and Ultrasonics Analytical chemistry Substrate (electronics) Thin film Condensed Matter Physics Layer (electronics) Stoichiometry Yttria-stabilized zirconia Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of Physics D: Applied Physics. 30:131-136
ISSN:	1361-6463 0022-3727
Popis:	A method for determining both the thickness and the average stoichiometry of thin films is presented. The method is based on implanting radioactive -sources in the substrate prior to layer growth and measuring the energy loss of the -particles as they traverse the layer. Information about the stoichiometry is obtained through the comparison of the energy loss of -particles of different initial energies. Experimental examples for the utilization of this method are presented, in which Sb was grown on Si substrates, GaAs, InAs and AlAs on GaAs and YBCO on YSZ. The experimental precision which can be expected using the method is discussed, together with specific scenarios in which it could be advantageously applied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::92b9f103347d8a4f59a9d768354e60e8 https://doi.org/10.1088/0022-3727/30/1/016 Zobrazit plný text záznamu