Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics

Autor: So Ra Min, Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
Rok vydání: 2022
Předmět:
Zdroj: Current Applied Physics. 43:106-115
ISSN: 1567-1739
DOI: 10.1016/j.cap.2022.08.015
Databáze: OpenAIRE