35.1: 14-inch AMOLED TV Driven by HfInZnO Thin-Film Transistors

Autor: Keehan Uh, Yeon-Gon Mo, Chang M. Park, Min-Kyu Kim, Chaun Gi Choi, Yong S. Park, Kwang S. Kim, Sungchul Kim
Rok vydání: 2011
Předmět:
Zdroj: SID Symposium Digest of Technical Papers. 42:472-475
ISSN: 0097-966X
Popis: A full-color 14-inch active matrix organic light emitting diode (AMOLED) TV, which does not suffer from the well-known pixel non-uniformity of luminance using a simple pixel circuit design consisting of 3 transistors and 1 capacitor, has been developed using amorphous hafnium-indium-zinc oxide (a-HIZO) thin-film transistors (TFTs) as an active-matrix backplane. The n-channel a-HIZO TFTs exhibit a field-effect mobility of 10 cm2/V-s, threshold voltage of 0.38V, on/off ratio of >108, and subthreshold gate swing of 0.21 V/decade. Notably, the long- and short-range standard deviations for the threshold voltage were less than 0.1V and 0.02V, respectively.
Databáze: OpenAIRE