| Autor: |
O. Yu. Sorokin, I. O. Belyachenkov, A. S. Chainikova, S. V. Zhitnyuk, P. N. Medvedev |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Voprosy Materialovedeniya. :49-58 |
| ISSN: |
1994-6716 |
| DOI: |
10.22349/1994-6716-2022-111-3-49-58 |
| Popis: |
The influence of porous SiC preforms densities for the siliconizing process on the structure and phase constitution of graphite-loaded reaction-bonded SiC (G-SiSiC) was studied. It was found that varying the densities of porous SiC preforms containing artificial graphite of similar grain size with the dimensions less than 25 mm (in height or diameter) can lead to the G-SiSiC samples with low free Si content (less 4 wt.%.). It was also shown that reaction sintering of G-SiSiC samples with the optimized densities during the siliconizing process results in the formation of a dense fine-grained SiC layer. Moreover, during the siliconizing process, a dense SiC gradient matrix is formed in which graphite and Si inclusions are uniformly dispersed in bulk. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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