Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy
| Autor: | Byoung Hun Lee, Tae Jin Yoo, Ho-In Lee, Soo Cheol Kang, Young Gon Lee, Hyeon Jun Hwang, Hokyung Park, Sunwoo Heo |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Zirconium Materials science Condensed matter physics Photoemission spectroscopy Band gap chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Capacitance Oxygen Electronic Optical and Magnetic Materials law.invention Capacitor chemistry law 0103 physical sciences Electrode Metal insulator metal capacitor Electrical and Electronic Engineering 0210 nano-technology Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society. 9:424-428 |
| ISSN: | 2168-6734 |
| Popis: | Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V characteristics obtained before and after rapid thermal annealing, origin and transformation of defect states have been successfully investigated. Our analysis revealed that deep-level defects originating from oxygen vacancies near the top electrode are causing of leakage current in MIM capacitor and these defects can be effectively reduced by a proper thermal annealing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|