Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Autor:	Han Su Cho, In Hwan Lee, Ivan Shchemerov, N. B. Smirnov, Alexander Y. Polyakov, S. I. Didenko, N. A. Tal'nishnih, R. A. Zinovyev, P. B. Lagov, N. M. Shmidt, Stephen J. Pearton, Sung-Min Hwang, E. I. Shabunina
Rok vydání:	2017
Předmět:	Materials science 02 engineering and technology Electron Electroluminescence 01 natural sciences Fluence law.invention Optics law 0103 physical sciences Materials Chemistry Electron beam processing Irradiation Electrical and Electronic Engineering 010302 applied physics business.industry Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wavelength Optoelectronics 0210 nano-technology business Light-emitting diode
Zdroj:	physica status solidi (a). 214:1700372
ISSN:	1862-6319 1862-6300
DOI:	10.1002/pssa.201700372
Popis:	Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.
Databáze:	OpenAIRE
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