Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS

Autor:	K. Takahashi, K. Komatsu, T. Sakamoto, K. Kimura, F. Matsuoka
Rok vydání:	2017
Předmět:	LDMOS Materials science business.industry N channel Degradation (geology) Optoelectronics State (computer science) business
Zdroj:	Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2017.ps-3-13
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8e50cc347139567337ac9049c8a4e438 https://doi.org/10.7567/ssdm.2017.ps-3-13 Zobrazit plný text záznamu