Electromechanical Computing at 500°C with Silicon Carbide

Autor:	Te Hao Lee, Swarup Bhunia, M. Mehregany
Rok vydání:	2010
Předmět:	Nanoelectromechanical systems Multidisciplinary Materials science Silicon business.industry Transistor chemistry.chemical_element law.invention chemistry.chemical_compound chemistry law Low-power electronics Logic gate Silicon carbide Inverter Optoelectronics Electronics business
Zdroj:	Science. 329:1316-1318
ISSN:	1095-9203 0036-8075
DOI:	10.1126/science.1192511
Popis:	High-Temperature Electronic Switching In electronic circuitry, the band gap of a semi-conductor helps to provide the barrier that keeps charge carriers from flowing until a voltage is applied that switches the device. As temperatures rise, the carriers acquire enough thermal energy to overcome the band gap, causing the device to leak current even when they are turned off. The higher band gap of silicon carbide (SiC) makes it an attractive candidate for higher-temperature operations compared to conventional silicon, but several performance issues occur with SiC junction field-effect transistors. T.-H. Lee et al. (p. 1316 ) describe the fabrication of SiC nano-electromechanical switches that formed inverter circuits with extremely low leakage currents and switched billions of times at 500°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8db62b69a55e4bf3d1aecaad00c8a590 https://doi.org/10.1126/science.1192511 Zobrazit plný text záznamu Plný text ve formátu PDF