Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates
| Autor: | Tin S. Cheng, D.E. Lacklison, D J Dewsnip, A. V. Andrianov, J.W. Orton, C. T. Foxon, S. E. Hooper, L. C. Jenkins |
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| Rok vydání: | 1997 |
| Předmět: |
Range (particle radiation)
Photoluminescence Materials science Silicon business.industry Exciton Doping chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Atomic electron transition Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Recombination |
| Zdroj: | Solid-State Electronics. 41:219-222 |
| ISSN: | 0038-1101 |
| Popis: | We report the results of photoluminescence measurements of four MBE samples of GaN doped with Si at levels in the range 10 17 –10 19 cm −3 . At the lower doping levels the near band edge emission is consistent with exciton recombination, being dominated by excitons bound either to neutral donors or to neutral acceptors. On increasing the doping above 10 18 cm −3 the evidence suggests that recombination may be dominated by free hole to donor-bound electron transitions which are considerably broadened by donor banding effects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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