Infrared spectroscopy of hydrogen in ZnO

Autor:	K. K. Zhuravlev, Matthew D. McCluskey, Peter J. Simpson, S. J. Jokela, Kelvin G. Lynn
Rok vydání:	2002
Předmět:	Physics and Astronomy (miscellaneous) Hydrogen Annealing (metallurgy) business.industry Chemistry Doping Analytical chemistry Infrared spectroscopy chemistry.chemical_element Antibonding molecular orbital Condensed Matter::Materials Science Semiconductor Impurity Molecular vibration business
Zdroj:	Applied Physics Letters. 81:3807-3809
ISSN:	1077-3118 0003-6951
Popis:	Zinc oxide (ZnO) is a wide-band gap semiconductor that has attracted tremendous interest for optical, electronic, and mechanical applications. First-principles calculations by [C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000)] have predicted that hydrogen impurities in ZnO are shallow donors. In order to determine the microscopic structure of hydrogen donors, we have used IR spectroscopy to measure local vibrational modes in ZnO annealed in hydrogen gas. An oxygen–hydrogen stretch mode is observed at 3326.3 cm−1 at a temperature of 8 K, in good agreement with the theoretical predictions for hydrogen in an antibonding configuration. The results of this study suggest that hydrogen annealing may be a practical method for controlled n-type doping of ZnO.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d73b5b6e07ae09cb7dc69785b18775b https://doi.org/10.1063/1.1520703 Zobrazit plný text záznamu