Preparation and purification of metal alkyls for use in the MOCVD growth of II/VI compound semiconductors

Autor: David J. Cole-Hamilton, Deodatta Vinayak Shenai-Khatkhate, D.C. Cupertino, E.D. Orrell, J.B. Mullin
Rok vydání: 1986
Předmět:
Zdroj: Journal of Crystal Growth. 77:27-31
ISSN: 0022-0248
Popis: The preparation of adducts of Me2Cd and Me2Zn with a range of nitrogen donor ligands has been investigated. Those with two nitrogen atoms, which cannot for geometrical reasons bind to the same metal atom, are shown to give involatile polymeric adducts, which dissociate on heating at one atmosphere or in vacuo below the sublimation temperature of the adduct or the Lewis Base. These adducts may be suitable for the purification of Me2Cd or Me2Zn. Those that dissociate Me2Zn or Me2Cd below the melting point of the adduct may be suitable precursors for the delivery of these alkyls by the MEM method. A new preparation of Et2Te based on the two phase reactions of aqueous Na2Te with EtBr is also reported. This gives high yields of Et2Te which is polytellurium-free.
Databáze: OpenAIRE