A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Autor:	Sang Pyo Hong, Hongil Yoon, Dong Il Seo, Kyu Chan Lee, Hyun Seok Lee, Ki-Chul Chun, Jae-Yoon Sim, Jei Hwan Yoo
Rok vydání:	2004
Předmět:	business.industry Computer science Electrical engineering General Physics and Astronomy Hardware_PERFORMANCEANDRELIABILITY PMOS logic CMOS Hardware_GENERAL Current sense amplifier Hardware_INTEGRATEDCIRCUITS General Materials Science Electronics business Low voltage Dram NMOS logic Voltage
Zdroj:	Current Applied Physics. 4:25-29
ISSN:	1567-1739
Popis:	A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8d347a3bf0a79f12f274a67fd1244038 https://doi.org/10.1016/j.cap.2003.09.008 Zobrazit plný text záznamu Full Text from ScienceDirect