A high-speed, high-sensitivity silicon lateral trench photodetector

Autor:	Min Yang, S.C. Ramac, Qingyun Yang, D.M. Kuchta, J.T. Marsh, Dennis L. Rogers, A.D. Ticknor, Kern Rim, Diane C. Boyd, A. Upham, Paul A. Rabidoux, Jeremy D. Schaub, F. Rodier, J.J. Welser
Rok vydání:	2002
Předmět:	Transimpedance amplifier Materials science business.industry Detector Photodetector BiCMOS Electronic Optical and Magnetic Materials law.invention Responsivity Optics law Trench Operational amplifier Optoelectronics Quantum efficiency Electrical and Electronic Engineering business
Zdroj:	IEEE Electron Device Letters. 23:395-397
ISSN:	1558-0563 0741-3106
Popis:	We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, exhibits a 6-dB bandwidth of 1.5 GHz at 3.0 V and an external quantum efficiency of 68% at 845 nm wavelength. A photoreceiver with a wire-bonded lateral trench detector and a BiCMOS transimpedance amplifier demonstrates excellent operation at 2.5 Gb/s data rate and 845 nm wavelength with only a 3.3 V bias.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8cc82f123b271ed1c68b22635f55be44 https://doi.org/10.1109/led.2002.1015212 Zobrazit plný text záznamu