High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

Autor:	Shigeo Matsuzaki, Takashi Iitsuka, Shigekazu Tomai, Koki Yano, Yuki Tsuruma, Kazuaki Ebata
Rok vydání:	2012
Předmět:	Materials science business.industry Subthreshold conduction General Engineering General Physics and Astronomy Sputter deposition Grain size Active layer Threshold voltage Thin-film transistor Optoelectronics Crystallite Thin film business
Zdroj:	Applied Physics Express. 5:011102
ISSN:	1882-0786 1882-0778
DOI:	10.1143/apex.5.011102
Popis:	Oxide thin-film transistors (TFTs) were fabricated using a polycrystalline In–Ga–O (IGO) thin film as the n-channel active layer by direct current magnetron sputtering. The 50-nm-thick IGO TFT showed a field-effect mobility of 39.1 cm2 V-1 s-1, a threshold voltage of 1.4 V, and a subthreshold gate voltage swing of 0.12 V/decade. The polycrystalline IGO thin film showed the cubic bixbyite structure of In2O3 without an obvious preferred orientation. The average grain size of polycrystalline IGO was approximately 10 µm. The high mobility of IGO TFT is related to the In2O3 crystalline phase and large grain size of the IGO film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8cc56c5934e20825c0119bf14e252b9b https://doi.org/10.1143/apex.5.011102 Zobrazit plný text záznamu