Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
| Autor: | Oliver Ambacher, Rudiger Quay, Beatrix Weiss, Stefan Moench, Patrick Waltereit, Ingmar Kallfass, Richard Reiner |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Pass transistor logic business.industry 020208 electrical & electronic engineering Transistor Electrical engineering Multiple-emitter transistor Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention law Optical transistor Logic gate 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Gate driver Power semiconductor device business Hardware_LOGICDESIGN Static induction transistor |
| Zdroj: | 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). |
| DOI: | 10.1109/wipda.2016.7799938 |
| Popis: | This work presents a monolithically-integrated power circuit with a single control input gate driver based on depletion-mode logic and a 600 V, 150 mΩ power HEMT in GaN-on-Si technology. The gate driver final-stage is a push-pull circuit, in which the pull-up transistor is indirectly driven through a depletion-load logic inverter, whereas the pull-down transistor is directly driven by the single external control input. Measurements of soft- and hard-switching turn-on transitions in an inductive-load half-bridge at 300 V/ 4 A demonstrate controllability of the turn-on speed by adding an external speedup resistor in parallel to the depletion-load. Gate-charge measurements show a 25-fold reduction of external pre-driver drive capability requirement during a 400 V turn-on transition, since the main power transistor gate-charge (8.5 nC)-related losses are provided and dissipated within the GaN power device, and only the pull-down gate driver transistor gate-charge of 0.34 nC has to be provided externally by the pre-driver circuit. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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