Resistive loss at 10 GHz inc-axis-alignedin-situ-grownYBa2Cu3O7films
Autor: | R. D. Jacowitz, M. R. Beasley, J. L. Moll, R. C. Taber, T. H. Geballe, Chang-Beom Eom, S. S. Laderman, Ann F. Marshall, T. L. Hylton |
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Rok vydání: | 1991 |
Předmět: | |
Zdroj: | Physical Review B. 43:2922-2933 |
ISSN: | 1095-3795 0163-1829 |
DOI: | 10.1103/physrevb.43.2922 |
Popis: | The resistive losses near 10 GHz are measured at 4.2 K for ten c-axis-oriented ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ thin films deposited in situ on MgO substrates. The losses range from 16\ifmmode\pm\else\textpm\fi{}3 \ensuremath{\mu}\ensuremath{\Omega}, the lowest value reported to date for a thin film of ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ to 740\ifmmode\pm\else\textpm\fi{}150 \ensuremath{\mu}\ensuremath{\Omega}, a difference of more than a factor of 40. Among the same films, the dc resistivity at 100 K ranges from 50 to 155 \ensuremath{\mu}\ensuremath{\Omega} cm, about a factor of 3. We show that the losses in the higher-loss samples can be accounted for by the presence of small fractions of c-axis-aligned grains highly misaligned in the plane of those films. Volume fractions of highly misaligned c-axis-oriented grains as low as 4% lead to losses above 500 \ensuremath{\mu}\ensuremath{\Omega}, more than 25 times higher than the loss in the lowest-loss film reported here. Among the lower-loss films having less than 0.15 vol % highly misaligned grains, a substantial portion of the losses are due to additional mechanisms. Among these films, the losses are found to be lower in the films with lower normal-state resistivities and higher transition temperatures (${\mathit{T}}_{\mathit{c}}$). For all samples, the losses increase with increasing deviations from structural or electrical behavior expected for ideal single crystals. The loss in even the lowest-loss film is orders of magnitude above that expected for an ideal isotropic BCS superconductor having the same ${\mathit{T}}_{\mathit{c}}$. The observed loss level is consistent with the presence of a large density of uncondensed carriers. |
Databáze: | OpenAIRE |
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