| Autor: |
Limeng Shi, Ninggang Dong, Xinnan Lin, Meihua Liu |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| DOI: |
10.1109/icsict.2018.8565730 |
| Popis: |
A novel approach for dual-metal-gate AlGaN/GaN HEMT on Si substrate for high-voltage power switching applications is reported. Compared with traditional dual-gate structure combined MIS gate and Schottky gate, we demonstrate dual-metal-gate with different work function. The supposed structure increased ON-state performance, reduced leakage current and improved the breakdown voltage (V BR ) of the device. In this work, the devices were designed and analyzed by using a 2D Sentaurus simulation tool. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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