Formation of a crystallization courtyard in eutectic systems and crystal growth

Autor: V. N. Gurin, L. I. Derkachenko, B. N. Korchunov, V. N. Osipov, T. B. Popova
Rok vydání: 2014
Předmět:
Zdroj: Technical Physics Letters. 40:199-202
ISSN: 1090-6533
1063-7850
DOI: 10.1134/s1063785014030055
Popis: The so-called crystallization courtyard is investigated that forms in processes of mass crystallization around the Ge and Si crystals and their solid solutions (Ge+Si) during cooling of hypereutectic alloys in the Ge-Al, Si-Al, and (Ge+Si)-Al eutectic systems. For the first time, data on the composition and microhardness of this crystallization courtyard are given and its role is shown as a stopper of cracking in an Al-(Ge,Si) system during rapid cooling after the heating system is turned off. For the first time, it is suggested that a crystallization courtyard forms in all hypereutectic systems (including every system in which the amount of the taken solvent does not correspond to the eutectic point).
Databáze: OpenAIRE