Formation of a crystallization courtyard in eutectic systems and crystal growth
Autor: | V. N. Gurin, L. I. Derkachenko, B. N. Korchunov, V. N. Osipov, T. B. Popova |
---|---|
Rok vydání: | 2014 |
Předmět: | |
Zdroj: | Technical Physics Letters. 40:199-202 |
ISSN: | 1090-6533 1063-7850 |
DOI: | 10.1134/s1063785014030055 |
Popis: | The so-called crystallization courtyard is investigated that forms in processes of mass crystallization around the Ge and Si crystals and their solid solutions (Ge+Si) during cooling of hypereutectic alloys in the Ge-Al, Si-Al, and (Ge+Si)-Al eutectic systems. For the first time, data on the composition and microhardness of this crystallization courtyard are given and its role is shown as a stopper of cracking in an Al-(Ge,Si) system during rapid cooling after the heating system is turned off. For the first time, it is suggested that a crystallization courtyard forms in all hypereutectic systems (including every system in which the amount of the taken solvent does not correspond to the eutectic point). |
Databáze: | OpenAIRE |
Externí odkaz: |