Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

Autor:	Changhee Ko, Cheol Seong Hwang, Sang Woon Lee, Woojin Jeon, Julien Gatineau, Woongkyu Lee, Jeong Hwan Han
Rok vydání:	2012
Předmět:	Dynamic random-access memory Materials science Annealing (metallurgy) General Chemical Engineering Analytical chemistry General Chemistry Chemical vapor deposition Dielectric Amorphous solid law.invention Atomic layer deposition law Materials Chemistry Growth rate Stoichiometry
Zdroj:	Chemistry of Materials. 24:4686-4692
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm302470k
Popis:	SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 °C using Sr(iPr3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO2 subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N2 ambient at temperatures ranging from 600 to 700 °C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO3 (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8ba81c9728b66739b1028ec40b51c4f1 https://doi.org/10.1021/cm302470k Zobrazit plný text záznamu