Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors

Autor:	M.-R. Chin, G. P. Li, J. Zhao, K.Y. Liao, A. La Duca, J.Y.-C. Sun
Rok vydání:	1993
Předmět:	Materials science Hydrogen Dopant Passivation business.industry Doping Dangling bond chemistry.chemical_element Biasing Electronic Optical and Magnetic Materials chemistry Electronic engineering Optoelectronics Grain boundary Electrical and Electronic Engineering business Common emitter
Zdroj:	IEEE Electron Device Letters. 14:252-255
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.215184
Popis:	The mechanisms behind moderate bias current gain ( beta ) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results suggest that transport of atomic hydrogen toward the poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and the poly/monosilicon interface are responsible for the moderate bias beta increase. To alleviate the beta instability, elimination of hydrogen involvement and/or a higher doping concentration inside the poly emitter in the back-end-of-line (BEOL) processes are/is recommended. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8b9ac68801ecb101270485337fb6c612 https://doi.org/10.1109/55.215184 Zobrazit plný text záznamu