A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs
| Autor: | Kuo-Wei Liu, A.F.M. Anwar |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Field (physics) business.industry Transistor Self consistent Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Signal Noise (electronics) Electronic Optical and Magnetic Materials law.invention law Materials Chemistry Optoelectronics Ingaas inalas Electrical and Electronic Engineering business High electron Quantum well |
| Zdroj: | Solid-State Electronics. 47:763-768 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(02)00321-0 |
| Popis: | An analytical model to evaluate device’s quantum well (QW) properties, current–voltage (I–V) characteristics, smallsignal parameters and noise property for InAlAs/InGaAs/InAlAs/InP high electron mobility transistors is presented.A self-consistent solution of Schr€ and Poisson’s equations is used to calculate the QW properties formed in the InGaAs layer (conduction channel) as well as an analytical velocity–electric field (vd–E) characteristics to evaluate device’s I–V characteristics, small-signal parameters and noise performance.In this paper, the calculation results of device performance for this class of devices are compared with experimental data and the results show good agreement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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