Electrical and luminescence properties of Mg‐doped p‐type GaPN grown by molecular beam epitaxy

Autor: K. Umeno, S. Mitsuyoshi, Akihiro Wakahara, Yuzo Furukawa, Hiroo Yonezu, Noriyuki Urakami
Rok vydání: 2010
Předmět:
Zdroj: physica status solidi c. 7:2498-2501
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200983851
Popis: We have demonstrated the acceptor concentration control for p-type GaPN grown by molecular beam epitaxy (MBE) using Mg as the acceptor element. The hole concentration increases up to 2×1019 cm-3 at 300 K and does not remarkably vary after thermal treatment and thus Mg is successfully doped into GaPN. Subsequently, we have investigated the electrical and luminescence properties of Mg-doped p-type GaPN grown by MBE. The activation energy is estimated to be about 37 meV, indicating Mg is a shallow acceptor element for p-type GaPN grown by MBE. When the hole concentration is larger than ∼1018 cm-3, the photoluminescence (PL) intensity decreases with increasing the hole concentration. By time-resolved PL (TRPL) measurement, this PL quenching is caused by the non-radiative centres due to Mg doping when the hole concentration is larger than ∼1018 cm-3. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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