New aspects of micromachining and microlithography using 157-nm excimer laser radiation
Autor: | J. Fair, M. Rahe, M. Kauf, D. Basting, M. Fiebig, H. Endert |
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Rok vydání: | 1999 |
Předmět: | |
Zdroj: | Applied Physics A: Materials Science & Processing. 69:S305-S307 |
ISSN: | 1432-0630 0947-8396 |
Popis: | The use of F2 excimer laser sources, emitting at 157 nm, constitutes a new promising tool for scientific, industrial and lithography applications. The 157-nm laser emission enables high-resolution processes and the high photon energy offers the unique possiblity of photoionizing molecules in a single step. Therefore a lower fragmentation or thermal loading takes place. The 157-nm radiation will enable fundamental research and development for deep UV (DUV) high-resolution optical microlithography in the manufacturing of integrated circuits. This is the next step from the technology of ArF lasers at 193 nm. Furthermore, benefits are expected for key technologies requiring high-resolution processing and the micromachining of tough materials like Teflon or fused silica for micro-optics fabrication. Such applications require F2 excimer laser sources with high performance, reliability and efficiency. The world of nanotechnology is just beginning to reveal its potential. |
Databáze: | OpenAIRE |
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