Composition, structure, and dielectric properties of SiC-AlN ceramic materials
| Autor: | B. A. Bilalov, S. A. Sadykov, G. K. Safaraliev, A. Sh. Agalarov, Sh. Sh. Shabanov |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
General Chemical Engineering Metals and Alloys chemistry.chemical_element Dielectric Nitride Inorganic Chemistry chemistry.chemical_compound chemistry Aluminium Materials Chemistry Silicon carbide Composition (visual arts) Dielectric loss Grain boundary Composite material Polarization (electrochemistry) |
| Zdroj: | Inorganic Materials. 49:57-61 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168513010135 |
| Popis: | We have studied the structure, relative dielectric permittivity (ɛ), and dielectric loss tangent (tanδ) of SiC-AlN ceramic materials. The results demonstrate that both ɛ and tanδ are anomalously high in the composition range 30–50 wt % AlN at low frequencies (0.1 kHz). We show that the increase in ɛ may be due to a barrier effect on silicon carbide and aluminum nitride grain boundaries and to migration polarization. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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