Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing
| Autor: | M. Wiemer, Kerstin Volz, M. Zimprich, Arash Rahimi-Iman, Martin Koch, Wolfgang Stolz, S. Reinhard, R. Woscholski, K. Jandieri, Mohammad Khaled Shakfa, S. Gies, S. D. Baranovskii, Wolfram Heimbrodt |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Silicon Annealing (metallurgy) business.industry Multiple quantum Metals and Alloys chemistry.chemical_element Heterojunction 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry NASP 0103 physical sciences Materials Chemistry Optoelectronics Rapid thermal annealing 0210 nano-technology Spectroscopy business |
| Zdroj: | Thin Solid Films. 613:55-58 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2015.10.062 |
| Popis: | Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. |
| Databáze: | OpenAIRE |
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