| Autor: |
S.R. Morrison, R.F. Frindt, M. Parameswaran, S. Wessel |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Microelectronics Journal. 23:451-456 |
| ISSN: |
0026-2692 |
| Popis: |
A heater structure for gas sensors is realized by utilizing standard CMOS technology together with post-process etching. The heater, fully suspended over an ≈100 μm deep cavity, is capable of supplying temperatures necessary for the operation of most semiconductor gas sensors. Various heater structures are characterized and results show that the power requirement to achieved a temperature of 100°C for a polysilicon heater of 3 μm 2 cross-section and 300–500 μm length is on the order of 10 mW. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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